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| Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. July 1998 Features * 2.8A and 3.3A, 350V and 400V * rDS(ON) = 1.8 and 2.5 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRF320 IRF321 IRF322 IRF323 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF320 IRF321 IRF322 IRF323 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1569.3 5-1 IRF320, IRF321, IRF322, IRF323 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF320 400 400 3.3 2.1 13 20 50 0.4 190 -55 to 150 300 260 IRF321 350 350 3.3 2.1 13 20 50 0.4 190 -55 to 150 300 260 IRF322 400 400 2.8 1.8 11 20 50 0.4 190 -55 to 150 300 260 IRF323 350 350 2.8 1.8 11 20 50 0.4 190 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V, (Figure 10) 400 350 VGS(TH) IDSS VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125oC 2.0 4.0 25 250 V V V A A MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF320, IRF322 IRF321, IRF323 Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) IRF320, IRF321 IRF322, IRF323 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF320, IRF321 IRF322, IRF323 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 3.3 2.8 - 100 A A nA IGSS rDS(ON) VGS = 20V ID = 1.8A, VGS = 10V, (Figures 8, 9) 1.5 1.8 2.7 10 14 30 13 12 1.8 2.5 15 20 45 20 20 S ns ns ns ns nC gfs VDS 10V, ID = 2.0A, (Figure 12) VDD = 200V, ID 3.3A, RG = 18, RL = 60, VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 1.7 - td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature - - 4 8 - nC nC 5-2 IRF320, IRF321, IRF322, IRF323 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured from the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) MIN - TYP 450 100 20 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation - - 2.5 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 3.3 13 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = 3.3A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/s TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/s 120 0.64 270 1.4 1.8 600 3.0 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 31mH, RG = 25, peak IAS = 3.3A. See Figures 15, 16. 5-3 IRF320, IRF321, IRF322, IRF323 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 5 ID, DRAIN CURRENT (A) 4 0.8 0.6 0.4 0.2 0 3 IRF320, IRF321 2 IRF322, IRF323 1 0 0 50 100 150 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE t1 t2 PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 0.1 1 10 0.01 10-5 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) IFR320, 1 ID , DRAIN CURRENT (A) 5 10V 80s PULSE TEST 6.0V ID , DRAIN CURRENT (A) 4 10 IRF322, 3 IFR320, 1 IRF322, 3 10s 3 5.5V 2 VGS = 5.0V 4.5V 4.0V 160 40 80 120 VDS , DRAIN TO SOURCE VOLTAGE (V) 100s 1 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 1ms 10ms DC 1000 1 IRF320, 2 IRF321, 3 0 0 200 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 IRF320, IRF321, IRF322, IRF323 Typical Performance Curves 5 80s PULSE TEST ID , DRAIN CURRENT (A) 4 10V 6.0V ID(ON) , ON-STATE DRAIN CURRENT (A) Unless Otherwise Specified (Continued) 10 VDS 50V 80s PULSE TEST DUTY CYCLE 2% 1 150oC 25oC 3 5.5V 2 VGS = 5.0V 1 4.5V 0 0 3 6 9 12 VDS , DRAIN TO SOURCE VOLTAGE (V) 4.0V 15 0.1 0.01 0 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 10.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 3.0 ID = 3.3A VGS = 10V 2.4 rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () 8.0 6.0 1.8 4.0 VGS = 10V VGS = 20V 1.2 2.0 0.6 0 0 3 6 9 ID , DRAIN CURRENT (A) 12 15 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1.05 C, CAPACITANCE (pF) 1.15 800 600 CISS 0.95 400 0.85 200 CRSS COSS 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF320, IRF321, IRF322, IRF323 Typical Performance Curves 5 PULSE DURATION = 80s gfs , TRANSCONDUCTANCE (S) 4 25oC ISD , SOURCE TO DRAIN CURRENT (A) Unless Otherwise Specified (Continued) 100 PULSE DURATION = 80s 10 3 150oC 2 TJ = 150oC 1 1 TJ = 25oC 0.1 0 0 1 2 3 4 5 ID, DRAIN CURRENT (A) 0 0.4 0.8 1.2 1.6 VSD , SOURCE TO DRAIN VOLTAGE (V) 2.0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS , GATE TO SOURCE VOLTAGE (V) ID = 3.3A 16 VDS = 320V VDS = 200V VDS = 80V 12 8 4 0 0 4 8 12 16 20 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 IRF320, IRF321, IRF322, IRF323 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUITS FIGURE 20. GATE CHARGE WAVEFORMS 5-7 |
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